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AFSID

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Welcome to the fascinating world of single electron and single dopant in nano-CMOS

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Latest News


An AFSiD  workshop covering recent advances in

single dopant and single electron effects in silicon nanodevices
will be held in the first part of UPSTREAM
Research @ Minatec Crossroads'2010 on June 23, 2010, Grenoble.

The confirmed speakers are:
Pr. Sven Rogge (TU Delft, NL) "Single dopant transport spectroscopy in Silicon"
Dr. Paul Chapman (Hitachi Cambridge, UK) "Silicon Charge Qubits"
Dr. Xavier Jehl (CEA-Grenoble, FR) "The MOS-SET"
Dr. Lucien Besombes (INéel, Grenoble, FR) "Single magnetic dopant in quantum dots"
Dr. YM Niquet (CEA-Grenoble, FR) "Single dopant modelization in nanowires"

 

 




Latest Publications

"Single donor ionization energies in a nanoscale CMOS channel"
Nature Nanotechnology 5, 133 - 137 (2010)
"Nanoelectronics: Single dopants learn their place"
Nature Nanotechnology 5, 100 - 101 (2010)
"Compact silicon double and triple dots realized with only two gates"
Appl. Phys. Lett. 95, 242107 (2009)
 

News Flash

Session “Advances in single dopant and single electron effects in silicon nanodevices

Minatec Crossroad ‘10 Conference Wednesday 23 June 2010, Grenoble

The continued downward scaling of transistors makes random fluctuations in the number of dopants a major issue in the microelectronics industry.
However it also provides a way of observing electronic transport through individual dopant orbitals, to modify these orbitals with gate voltage and to use quantum degrees of freedom, for example the spin to build new functionalities. In situ electrical detection of single dopant implantation as well as the manipulation of single dopants with scanning tunnelling microscopes are rapidly progressing towards fully deterministic doping.
A review of this active field – including single dopant, single spin and single charge effects- will be given by experts of this field,
some of them supported by the European project "AFSiD" (www.afsid.eu).

 

14h00-14h05   Dr. Marc Sanquer Coordinator of AFSiD and CEA-INAC, Grenoble France “Introduction to the session”
14h05-14h45   Pr. Sven Rogge TU Delft The Netherlands “Single dopant transport spectroscopy in Silicon”
14h45-15h25   Dr. Lucien Besombes CNRS-Institut Néel Grenoble France  “Single magnetic dopant in quantum dots”
15h25-16h05   Dr. Yann-Michel  Niquet CEA-Grenoble INAC Grenoble France   “Single dopant modelization in nanowires”
16h05-16h25   Coffee Break
16h25-17h05   Dr. Xavier Jehl CEA-Grenoble INAC Grenoble France  “MOS-Single Electron Transistors“
17h05-17h45   Dr. Paul Chapman Hitachi Cambridge Lab. Cambridge UK    “Silicon Charge Quantum bits”

 

 

Informations about location, venue, agenda, and registration … are available at http://www.minatec-crossroads.com/
“Advances in single dopant and single electron effects in silicon nanodevices” session is included in “MINATEC upstream research.”

Afsid Pictures

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